Electromigration resistant and profile consistent contact arrays

ABSTRACT

A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

PRIORITY

This application is a continuation of U.S. patent application Ser. No.16/014,134, filed Jun. 21, 2018, which is incorporated by referenceherein in its entirety.

TECHNICAL FIELD

This document pertains generally, but not by way of limitation, todevice packages, and contacts and contact arrays providing electricalconnections in device packages.

BACKGROUND

Packages including devices such as semiconductors include a plurality(e.g., thousands) of conductive traces. Contacts including contact pads,vias, solder balls, pins or the like provide terminals for connectionwith devices and facilitate interconnections between devices. In someexamples, a substrate is provided beneath each of one or more componentdevices. The substrate includes the interconnections between the devicesincluding conductive traces and the like. In some examples, the contacts(pads, vias, caps, solder balls or the like) that provideinterconnections number in the thousands, for instance twenty to fortythousand contacts or more.

In packages having a plurality of devices including embedded multi-dieinterconnect bridge (EMIB) packages and Patch on Interposer (PoINT)packages, Silicon bridge die with fine routing layers are included toprovide interconnections, such as densely packed (e.g., fine pitch)caps, vias and conductive traces between devices. In various examples,the packages are formed with laminated dielectric build-up layers. Forinstance, active die or the like are coupled through the bridge dieembedded within the substrate and dielectric layers are built up aroundand over the bridge die.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, which are not necessarily drawn to scale, like numeralsmay describe similar components in different views. Like numerals havingdifferent letter suffixes may represent different instances of similarcomponents. The drawings illustrate generally, by way of example, butnot by way of limitation, various embodiments discussed in the presentdocument.

FIG. 1 is a perspective view of one example of a package assemblyincluding one or more devices.

FIG. 2 is a schematic cross sectional view of one example of a packageassembly including at least one device having contacts coupled withvias.

FIG. 3A is a detailed schematic cross sectional view of a portion of apackage assembly having vias in application and reflowed configurations.

FIG. 3B is a detailed schematic cross sectional view of another portionof a package assembly including vias and an interconnection enhancingbridge die.

FIG. 4 is a detailed cross section of one example of a package assemblyincluding via assemblies having an electromigration resistant materialincluding electromigration resistant vias.

FIG. 5 is a detailed cross section of another example of a packageassembly including via assemblies having electromigration resistantmaterial including an electromigration resistance cap layer.

FIG. 6 is a cross section comparison of a second package assemblyincluding via assemblies having electromigration resistant vias inapplication and reflowed configurations.

FIG. 7 is a cross section comparison of a third package assemblyincluding via assemblies having electromigration resistant vias inapplication and reflowed configurations.

FIG. 8 is a block diagram showing one example of a method forinterconnecting die.

DETAILED DESCRIPTION

The present inventors have recognized, among other things, that aproblem to be solved can include reducing bump thickness variation (BTV)in the package via assemblies (caps and vias) that are provided in adense format (e.g., with a fine pitch, corresponding to the center tocenter distance between features and possibly with variable sizes ofcaps and vias (e.g., diameters), while at the same time maintaining oreven enhancing electromigration resistance in the package caps and vias.

Smaller and more densely packed (finer pitch) caps and vias are used forfine die to die connections. Fine pitch caps and vias minimize datathrottling between logic die (processors) and memory die (memory), whileminimizing the overall footprint of packages and devices. Vias and capsare subject to electromigration (via and cap material mixing andconsumption in the presence of voltage and current). Electromigrationdecreases conductivity of vias (decreases the Imax capability whichrepresents the maximum current that can be passed through the via beforeits conductivity is reduced below a specified value) and also makes viasbrittle and prone to failure due to formation of inter-metalliccompounds (IMCs, such as alloys of copper and tin). In some examples, anintervening layer of nickel is provided in the cap between a via apexand a solder cap layer of the cap. The nickel layer retards theelectromigration of copper and tin. Further, increasing the thickness ofthe nickel layer and the tin layer provide a corresponding increase inelectromigration resistance and reduction in IMC growth while increasingthe thickness of the cap.

However, with the increasing density of caps, vias and conductive tracesto enhance data flow between devices (e.g., with fine arrays of vias,photolithographed traces, bridge die or the like) nickel layers are noteffectively applied within small orifices, for instance orificesprovided for the formation of caps (substrate side contacts). Thethickness of nickel deposited is reduced to ensure no bridging of thebumps or to ensure BTV is low. The minimized nickel layer has reducedelectromigration resistance and the via experiences increased IMG growthand decreased Imax capability.

Further, package substrates with connection enhancing features likebridge die (in EMIB) and PoINT (patch on interposer) are built withlaminated dielectric build-up layers. As the layers are built around andover the bridge die and patches, between densely formed vias or the likeundulations are created around these features that increase variation ofthickness of the caps (e.g., bump thickness variation or BTV). BTVfrustrates consistent and reliable bonding between die and connectedsubstrates.

Further, variations in the size (diameter) of via assemblies in the samepackage while applying a common solder and nickel plating thicknessgenerates greater BTV upon reflowing between different sized viaassemblies. Stated another way, the same thickness of tin and nickelplating will, when reflowed, provide a large variation in cap thickness(bump height or bump thickness) between the large and small viaassemblies. Variations in cap thickness (i.e., increased BTV) decreasethe reliability of connection between devices and via assemblies.Instead of providing a planar array of caps for connection, the capswith increased BTV provide a tilted, undulating array of substrate sidecontacts or the like that poorly connect with the die side contacts ofdie.

In various examples, one or more of the nickel or solder layers are madethinner in plating processes to decrease bump height and accordinglyminimize bump height variation (BTV). In effect, the thinner the initialplating thickness of Ni and Sn is, the less variation there is in bumpthickness (e.g., decreased BTV) after reflow between large and smallcaps. However, decreasing the thickness of the plating of solder andnickel further frustrates the issues with thin nickel layers (decreasedelectromigration resistance). Electromigration resistance is decreasedbecause of the decreased thickness (to minimize BTV) of nickel layers.Accordingly, IMC growth is promoted and Imax capability is decreased.Stated another way, a decrease in plating thickness to decrease BTVadversely decreases electromigration resistance, and an increase inplating thickness to address electromigration resistance adverselyincreases BTV.

The present subject matter helps provide a solution to these problemswith a package assembly including a plurality of via assemblies thatprovide electromigration resistant vias in place of or in addition tolayers of nickel or nickel alloys in the cap. As previously describedthin layers of nickel in caps decreases electromigration resistance andnegatively impact various characteristics (e.g., Imax capability and IMCgrowth). The present subject matter provides electromigration resistantfeatures that are relatively long (and thereby thick) with regard to acopper base pad and a solder cap (tin). For instance, a via passage isfilled with a nickel or nickel alloy filler in contrast to a copperfilled via passage. The nickel (including a nickel alloy) filled viareadily isolates the base pad and the cap from each other. For instance,a copper base pad is remotely positioned relative to a solder (tin) capbecause of the intervening electromigration resistant via. Additionally,the electromigration resistance via includes a relatively large volumeof the electromigration resistant filler (because of its length)compared to the volume of either of the base pad (e.g., copper) or thecap (tin), thereby further minimizing electromigration between thesematerials. Furthermore, arrays of contacts on die and via assemblies onsubstrates are provided in a dense profile (e.g., with fine pitch)because the via assemblies include electromigration resistant vias, andplating of nickel within small cap orifices is minimized (e.g., reducedor eliminated). Accordingly, even dense arrays of via assemblies areprovided that are also electromigration resistant and thereby provideenhanced Imax capability with minimized IMC growth.

Further still, because via assemblies include the electromigrationresistant material in the via passage the caps are, in one example,relatively thin because the nickel layer of other package assemblies isabsent or minimized. Accordingly, variation in cap thickness (e.g., BTV)is minimized at reflow of the via assemblies, even with via assemblieshaving a variety of profiles (sizes, diameters or the like).

In another example, the via assemblies include other features configuredto increase electromigration resistance while at the same timeminimizing BTV. For instance, the cap is provided as a multi-componentassembly including a solder cap layer and an underlying electromigrationresistant cap layer, such as a nickel alloy doped with one or more oftungsten, molybdenum, or ruthenium. The electromigration resistant caplayer has higher electromigration resistance than nickel alone, andaccordingly is applied in thinner layers than nickel while stillachieving increased electromigration resistance and its attendantbenefits e.g., increased Imax capability and decreased IMC growth).Additionally, by minimizing the thickness of the cap with a thinlyapplied electromigration resistant cap layer the overall thickness ofthe cap is minimized and accordingly BTV is decreased between large andsmall profile (e.g., diameter) via assemblies that are plated with capshaving the same initial thickness (of a solder layer andelectromigration resistance cap layer).

This overview is intended to provide an overview of subject matter ofthe present patent application. It is not intended to provide anexclusive or exhaustive explanation of the disclosure. The detaileddescription is included to provide further information about the presentpatent application.

FIG. 1 shows a perspective view of one example of a composite deviceassembly 100 (e.g., an exemplary package assembly). As shown, thecomposite device assembly 100 includes a package body 102 forming asubstrate for supporting one or more devices such as the devices 104(e.g., one or more dies) shown on the package body 102. The compositedevice assembly 100 provides a. monolithic base for reception of theplurality of devices 104 and interconnection of the devices. The devices104 include, but are not limited to active devices, logic devices,memory devices or the like (including, but not limited to, dies,packages including one or more dies or the like).

The composite device assembly 100 includes a plurality ofinterconnecting features that connect the various devices 104 (includingdevices embedded in the substrate). One example of the interconnectingfeatures includes bridges 106 (bridge dies) interposed between thedevices 104. As will be described herein the bridges 106 are locallypositioned adjacent to one or more devices 104 and provideinterconnections to allow for communication (and optionally the deliveryof power) between the devices 104. The bridges 106 include a pluralityof conductive traces or the like configured to interconnect the devices104. In some examples, the bridges 106 include dense (e.g., highpitched) conductive traces that provide numerous interconnectionsbetween devices 104 in the relatively compact bridges 106, for instancerelative to individually patterned conductive traces.

In other examples, composite device assemblies include otherinterconnecting features, such as via assemblies, conductive traces orthe like formed or provided to the substrate (e.g., the package body102). These features are formed with build-up techniques including, butnot limited to, techniques that gradually build layers of the substrate,photolithograph the features or the like. In still other examples, theinterconnecting features include other intervening components similar tobridges 106, such as a Patch which can house an embedded bridge thatinterconnect devices.

FIG. 2 shows one example of a package assembly 200. The package assembly200 shown in FIG. 2 is, in one example, a composite device such as thecomposite device assembly 100 shown in FIG. 1. In another example, thepackage assembly 200 shown in FIG. 2 is a component of an overallcomposite device assembly. As shown in FIG. 2, the package assembly 200includes one or more dies 206, 207 coupled with a plurality of viaassemblies 210, 212 provided with the substrate 202. As shown, the viaassemblies 210, 212 extend through the substrate 202, for instance, forconnection with one or more conductive traces 204 or interconnectingfeatures such as a bridge die 205 (e.g., having a dense, finely pitchedarray of conductive traces extending into and out of the page). AlthoughFIG. 2 shows one example of a bridge die 205, other examples can havemultiple bridge dies or active dies with or without Through Silicon Vias(TSVs). In still other examples, the via assemblies 210, 212 are coupledwith conductive traces not associated with a bridge die 205 and havingone or more of fine or coarse pitch center to center distance) betweenthe traces according to the architecture of the package assembly.

Referring again to FIG. 2, the die 206 is shown with a variety ofcontact arrays, for instance, first and second contact arrays 208, 209.As shown in FIG. 2, the first contact array 208 is coupled with a moredensely arranged series of via assemblies 212. In contrast, the secondcontact array 209 is coupled with one or more via assemblies 210arranged in a less dense or coarse configuration (density) relative tothe via assemblies 212 of the first contact array 208. In one example,the first and second contact arrays 208, 209 are provided on the die 206to provide one or more electrical contacts for connection with otherfeatures of the package assembly 200 including, for instance, one ormore bridge dies 205, other dies provided with the package assembly 200and one or more interconnecting features such as the via assemblies 210,212. In one example, the inclusion of high density contact arrays 208,for instance, having a fine pitch, as shown in FIG. 2, enhances thenumber of connections provided by the package assembly 200 and, in someexamples, decreases the throttling of data or power to and from the die206 to other components of the package assembly 200. Further, the highdensity contact arrays 208 are correspondingly coupled with viaassemblies, such as assemblies 212, provided with a similar fine pitch(e.g., high density).

As further shown in FIG. 2, each of the first and second contact arrays208, 209 are coupled with corresponding via assemblies 212, 210. In oneexample, the first contact array 208 having a finer pitch relative tothe second contact array 209 correspondingly has densely packed or finepitched via assemblies 212. In the example shown in FIG. 2, the viaassemblies 212 interconnect the package assembly 200 and the firstcontact array 208 thereon with one or more components, for instance, thebridge die 205 shown in FIG. 2. The second contact array 209, as shownin FIG. 2, has a coarse pitch and is thereby less densely packed thanthe first contact array 208. Accordingly, the via assemblies 210associated with the second contact array 209 are less dense or have acoarser pitch relative to the via assemblies 212. As shown in theexample of FIG. 2, the via assemblies 210 are optionally coupled withone or more conductive traces, additional vias or the like.

As further shown in FIG. 2, the via assemblies 210, 212 include varyingprofiles, for instance, one or more of diameter, shapes or the likerelative to each other. In the example shown, the via assemblies 210 arerelatively larger or have a larger profile (e.g., diameter, width or thelike) relative to the via assemblies 212. As described herein,variations in via assemblies such as the via assemblies 210, 212including variations in their profile (e.g., diameters, width, shape orthe like) as well as variations in density such as the fine pitch of thevia assemblies 212 (and accordingly dense packing of the via assemblies212) relative to the coarse pitch of the via assemblies 210 (or lessdense packing of the via assemblies 210), for instance, in the substrate202.

The via assemblies 210, 212, as described herein, include one or morefeatures configured to enhance electromigration resistance of the viaassemblies 210, 212 and accordingly minimize (e.g., including minimize,eliminate or the like) migration of one or more materials of the viaassemblies 210, for instance, copper in a base pad and tin in the solderthat, in some examples, decreases the maximum current to the viaassemblies 210, 212 (Imax) and increases intermetallic compound growth(IMC). Further, the via assemblies 210, 212 described herein provideenhanced electromigration resistance while at the same time minimizingvariation in bump height, for instance, corresponding to one or more ofthickness or height variation of the caps of each of the via assemblies210, 212. Providing each of the via assemblies 210, 212 with arelatively planar interface profile, for instance, a planar dieinterface profile ensures consistent and reliable coupling between thedies 206, 207 and the corresponding via assemblies 210, 212. Forinstance, one or more of tilting, canting or the like of the dies 206,207 relative to the corresponding caps of the via assemblies 210, 212 isminimized. Accordingly, when reflowed, for instance, to fix the dies206, 207 to the corresponding via assemblies 210, 212 robust mechanicalcouplings are formed therebetween to ensure consistent and reliableelectrical interconnection of the dies 206, 207 with corresponding otherfeatures of the package assembly 200 including, but not limited to,bridge dies 205, other logic or active dies or the like.

FIG. 3A shows one example of via assemblies 300, 302 in twoconfigurations. In the first configuration provided on the left of FIG.3A, the via assemblies 300, 302 are in an application configuration, forinstance, including caps 310 having an interface cap layer 312 and asolder cap layer 314 provided above a via, such as the vias 308. Inthese examples, the interface cap layer 312 and the solder cap layer 314of each of the via assemblies 300, 302 are shown in an as-appliedconfiguration e.g., the application configuration). The interface caplayer 312 and the solder cap layer 314 of each of the via assemblies300, 302 are, in one example, applied through plating, for instance,with a consistent thickness across each of the via assemblies 300, 302.By plating each of the interface cap layer 312 and the solder cap layer314, the caps 310 of each of the via assemblies 300, 302 are initiallyformed with an identical thickness, height or the like as shown, forinstance, in the first (left) portion of FIG. 3A. As further shown, thevia 308 of the vias assembly 300 extends from the cap 310, for instance,to a base pad 306 within the substrate 304. Further, the via assembly302 also includes a via 308 extending to a base pad 306 within thesubstrate 304.

Referring now to the right portion of FIG. 3A, an after reflowconfiguration or reflowed configuration is shown. Each of the viaassemblies 300, 302 is shown in a different (heated or after heated)configuration relative to the application configuration shown, forinstance, in the left portion of FIG. 3A. The via assembly 300 includesthe cap 310 having the solder cap layer 314 positioned over theinterface cap layer 312. After reflowing, the cap 310 of the larger viaassembly 300 has changed its height (or thickness) relative to theprevious dimensions of the cap 310 of the via assembly 300 shown in theleft portion of FIG. 3A. For instance, each of the reflowed interfacecap layer 312 and the solder cap layer 314 are shown in the rightportion having a marginally decreased thickness or height relative tothe layers 312, 314 on the left side of FIG. 3A.

As further shown in FIG. 3A, the (smaller profile) via assembly 302 inthe reflowed configuration has varied dimensions relative to its initialconfiguration in the application configuration shown in the left portionof the figure. For instance, the via assembly in the reflowedconfiguration including, for instance, the cap 310 and its componentsolder cap layer 314 and interface cap layer 312 are shown with aminimized height, thickness or the like relative to the cap 310 shown inthe left portion of FIG. 3A (e.g., application configuration).

As further shown in the reflowed configuration, each of the via assembly300 and the via assembly 302 have a thickness (or height) variation 316therebetween. In one example, variations in the profiles of the viaassemblies 300, 302, for instance, their diameter, shapes or the liketriggers corresponding variations upon reflowing of the caps 310. Forinstance, each of the solder cap layer 314 and interface cap layer 312of each of the via assemblies 300, 302 changes to a differing heightrelative to their initial configurations and further change to differentheights relative to each other in the reflowed configuration. Thisvariation is shown with the thickness (or height) variation 316 in FIG.3A. Additionally, as shown by the broken lines in FIG. 3A, an undulatingdie interface profile 318 is provided by each of the via assemblies 300,302 including, for instance, their respective caps 310. The thickness orheight variation 316 provides the undulating die interface profile 318and provides a tilted or non-planar configuration for interfacing withthe corresponding contacts of a device, such as the die 206 shown, forinstance, in FIG. 2. When the die 206 is coupled with the via assemblies300, 302 having the undulating die interface profile 318 post reflowing,the tilted configuration of the via assemblies 300, 302 frustrates thereliable and robust coupling between the via assemblies 300, 302 and thedie 206. For instance, the die 206 is tilted, canted or the like whilecoupled along the via assemblies 300, 302 according to the undulatingdie interface profile 318. Some of the via assembly 300, 302 have weakor unreliable connections that fail, partially fail, short circuit orthe like when tested, during use or the like.

Referring again to FIG. 3A, in some examples, the variation (e.g.,thickness or height variation 316) and the corresponding undulating dieinterface profile 318 are, in some examples, addressed, for instance, bydecreasing the thickness of the caps 310 of each of the via assemblies300, 302. In one example, the caps 310 have a minimized height wheninitially plated (e.g., in the application configuration). By decreasingthe thickness of the caps 310, 312, for instance, by minimizing thethicknesses of the interface cap layer 312, solder cap layer 314 or thelike at application of the layers, in practice, the thickness or heightvariation 316 is also minimized in the reflowed configuration. Statedanother way, in one example greater height variation 316 after reflowingoccurs with taller caps 310 in the initial application configuration),and conversely decreased height variation 316 occurs with shorter caps310 (in the initial application configuration). Accordingly, the caps310 of each of the via assemblies 300, 302., in some examples, assume aconfiguration having a minimized undulating die interface profile 318.However, decreasing of one or more of the layers, for instance, theinterface cap layer 312, in one example including nickel, decreases theoverall electromigration resistance of the via assemblies 300, 302. Forinstance, decreasing the interface cap layer 312 removes some volume ofthe intervening nickel between the copper in the via 308 and the solder(tin) in the solder cap layer 314 and more readily permits theintermetallic compound growth between the solder cap layer 314 and thevia 308. One or more of the maximum current (such as Imax) of the viaassemblies 300, 302 is thereby sacrificed in exchange for decreasing theheight variation or thickness variation 316 of the via assemblies 300,302.

FIG. 3B shows another example of a package assembly 330 with devices,such as the dies 206, 207, removed for illustration purposes. As shownin FIG. 3B, the package assembly 330 includes the via assemblies 300,302. In this zoomed out view relative to FIG. 3A, the via assemblies 302are provided in a first via assembly array 332, for instance, having afine pitch (increased density) relative to the via assemblies 300 of asecond via assembly array 334. As shown and previously described herein,the via assemblies 302 have a smaller profile (e.g., diameter, width orthe like) relative to the via assemblies 300 of the second via assemblyarray 334. Additionally, the via assemblies 302 of the first viaassembly array 332 are more densely clustered, packed or the like (havea finer pitch) relative to the via assemblies 300 of the second viaassembly array 334. The smaller via assemblies 302 have vias 308extending from base pads 306 to corresponding caps 310 with smallerprofiles (diameters, widths or the like), for instance, profiles of 23microns or less, 10 microns or less, 6 microns or less or the like.Conversely, the vias 308 of the via assemblies 300, for instance, of thesecond via assembly array 334 have profiles larger than those of thefirst assembly via array 332. For instance, the vias 308 of the secondvia assembly array 334 and the component via assemblies 300 includeprofiles (diameters, widths or the like) of 70 microns or less, 45microns or less or the like.

As further shown in FIG. 3B, the package assembly 330 also includes oneor more interconnecting features, for instance, a bridge die 205provided in the substrate 336. As previously described herein, thebridge die 205, in one example, provides densely packed (e.g., finepitch) conductive traces or the like configured to provide a highdensity series of contacts and interconnections between one or moredevices, for instance, the die 206, die 207 or other components of thepackage assembly 330 (or package assembly 200 shown in FIG. 2) or thecomposite device assembly 100 shown in FIG. 1. In some examples, theinclusion of one or more features such as bridge die 205 or denselypacked conductive traces localizes or clusters the vias or viaassemblies such as the via assemblies 302 of the first via assemblyarray 332 in a dense or finely pitched configuration such as that shownin FIG. 3B. By filling the zone above the bridge die 205 with finelypitched via assemblies 302 space otherwise used, for instance, by thesubstrate build-up dielectric, 336 is assumed. Accordingly, as the space336 is built up around one or more features of the package assembly 330using the dielectric, for instance, the various via assemblies 300, 302of the respective second and first via assembly arrays 334, 332, thedielectric that fills the interstitial spaces 338 between the vias 308,is not able to spread as with the spacing between the via assemblies300, and is elevated relative to the remainder of the substrate 336.

As shown in FIG. 3B, the clustered dielectric 338 between the vias 308has additional height and provides one or more substrate variations 344relative to the remainder of the substrate 336. In one example, theiterative buildup of the via assemblies 302, 300 continues relative tothe substrate 336 and the substrate variations 344. Accordingly, thecaps 310 of the via assemblies 300 are relatively recessed or relativeto the caps 310 of the via assemblies 302. For instance, as shown inFIG. 3B, the caps 310 of the first via assembly array 332 are positionedat a relatively higher elevation relative to the caps 310 of the secondvia assembly array 334. In a similar manner to the configuration shownin FIG. 3A with the reflowed configuration, the variation in heights ofthe caps 310 of each of the first and second via assembly arrays 332,334 generates an undulating die interface profile 342 corresponding to athickness or height variation 340. The undulating die interface profile342 accordingly provides a non-planar interface for connection with oneor more devices such as the dies 206, 207. Accordingly, one or more ofrobust and reliable electrical communication and connection of the dies206, 207 with associated features of the package assembly 330 isfrustrated.

In some examples, the thickness or height variation 340 shown in FIG. 3Bcaused by substrate build-up dielectric variations 344 and the thickness(or height) variation 316 caused, for instance, by the variations inprofiles of the via assemblies 300, 302 and the thickness of theircomponent caps 310 occur in tandem to further exaggerate thickness orheight variations 340, 316 and their corresponding undulating dieinterface profiles 342, 318. Stated another way, the undulating profiles342, 318 shown in each of FIGS. 3B and 3A are, in some examples, furthernegatively enhanced by each of these phenomenon to accordingly furtherfrustrate the robust and reliable coupling of dies 206, 207 withunderlying via assemblies, for instance, the first and second viaassembly arrays 332, 334.

FIG. 4 shows one example of a via assembly 400, for instance, for use asone or more of the via assemblies 300, 302 shown in FIG. 313. As shownin FIG. 4, the via assembly 400 includes a base pad 404, a cap 410, andan intervening electromigration resistant via 406. In one example, thebase bad 404 includes copper, and the cap 410 includes solder (e.g.,tin). The electromigration resistant via 406 is provided within asubstrate 402, for instance, a substrate including, but not limited to,a dielectric or other material built up in one or more layers as alaminate or the like to accordingly form the substrate of a packageassembly, device or the like. As further shown in FIG. 4, the substrate402 provides a via passage 408 and the electromigration resistant via406 extends within the via passage 408, for instance, from a via base416 to a via apex 418. In one example, the via apex 418 is proximate tothe cap 410 and the via base 416 is proximate to the base pad 404.

As further shown in FIG. 4, the cap 410, in one example, includes asolder cap layer 412. The solder cap layer 412 includes, but is notlimited to, tin or tin alloys. Conversely, the base pad 404 is, in oneexample, formed with copper and is configured for coupling with aconductive trace, such as one or more of the conductive traces 204shown, for instance, in FIG. 2. Alternatively, the base pad 404 is aportion of the conductive trace.

Referring again to FIG. 4, as previously described, the via assembly 400includes an electromigration resistant via 406 provided within the viapassage 408 of the substrate 402. In one example, the electromigrationresistant via 406 is formed within the via, for instance, by way of aplating process or other process that fills the via passage 408 andprovides a conductive trace for interconnection between the base pad 404and the cap 410. In this example, the electromigration resistant viaincludes, but is not limited to one or more of a nickel or nickel alloyvia, a cobalt alloy via, an iron alloy via or the like. In otherexamples, for instance, where the electromigration resistant via 406includes a nickel alloy, the nickel alloy is doped with one or morematerials including, but not limited to, tungsten, molybdenum orruthenium. The electromigration resistant via 406, in one example,includes a third conductive material (e.g., an electromigrationresistant material) relative to a first conductive material of the basepad 404 and a second conductive material of the cap 410. In thisexample, the third conductive material is an electromigration resistantmaterial including one or more of nickel, nickel alloy or any of theother alloys described previously herein.

As shown in FIG. 4, the volume of the electromigration resistantmaterial (e.g., the third conductive material) is, in this example,greater than the respective volumes of one or more of the cap 410including, for instance, the solder cap layer 412 and the volume of thefirst conductive material of the base pad 404. Accordingly, the cap 410(e.g., tin) is isolated from the base pad 404 (e.g., copper) by arelatively larger quantity and dimension of the third conductivematerial, such as an electromigration resistant material. Additionally,the interpositioning of the electromigration resistant via 406, forinstance, in an elongate manner extending from the via base 416 towardthe via apex 418 dimensionally isolates the cap 410 from the base pad404.

Further, in still other examples, the via assembly 400 including the cap410 optionally includes an electromigration resistant cap layer 414. Inone example, the electromigration resistant cap layer 414 is constructedwith a material similar to or identical to the third conductive materialof the electromigration resistant via 406. Accordingly, the cap 410 is,in one example, a cap assembly including the solder cap layer 410 andthe optional electromigration resistant cap layer 414.

In the example shown in FIG. 4, the via assembly 400 provides a cap 410that minimizes one or more electromigration resistant features (such asnickel plated layers included in a cap and not in the via) andaccordingly minimizes the height or thickness of the cap 410 relative toprevious caps. For instance, the electromigration resistant material (athird conductive material, in this example) is provided in the viapassage 408 in place of a material in the cap 410 subject toelectromigration and intermetallic growth with tin, such as copper.Instead, the cap 410, in one example, includes a solder cap layer 410without an electromigration resistant layer, or includes a minimalelectromigration resistant cap layer 414 (as shown). Theelectromigration resistant material is positioned within the via passage408 to facilitate a smaller profile cap 410, for instance, a cap havinga decreased height, thickness or the like relative to previous viaassembly designs (e.g., see FIG. 3A) having relatively thick nickelplated layers.

The cap 410 (e.g., height, thickness or the like) has a minimizedprofile at its application configuration (before reflow) andaccordingly, when reflowed, the variation between multiple caps 410 ofmultiple via assemblies 400 is also minimized. Further, even withvariations in via assembly profiles larger and smaller diameter viaassemblies) the minimized caps 410 improve (decrease) the variation inthickness and die interface profile after reflow, in contrast to thepronounced thickness (or height) variation 316 and correspondingundulating die interface profile 318 shown in FIG. 3A. The improvementsincluding minimized thickness variation and corresponding planarinterface profiles of the via assemblies are achieved while at the sametime retaining or even enhancing electromigration resistance in the viaassemblies 400. Put another way, the electromigration resistant materialwithin the electromigration resistant via 406 isolates the cap 410 fromthe base pad 404 and, at the same time, allows for minimizing of thethickness or height of the cap 410. The minimized dimension of the cap410 facilitates the decreased variation of the cap 410 height in thereflowed configuration (e.g., minimizes BTV).

Referring now to FIG. 5, another example of a via assembly 420 is shown.In this example, the via assembly 420 includes one or more componentssimilar to the via assembly 400 previously described and shown in FIG.4. For instance, the via assembly 420 includes a base pad 424, such as acopper base pad, and a cap assembly 430 including a solder cap layer432. The via assembly 420 is provided in a substrate 422 including, butnot limited to, a dielectric or other material built up in one or morelayers as a laminate or the like. In one example, the solder cap layer432 includes tin. Further, the via assembly 420 includes a via 426, forinstance, a copper via, nickel or nickel alloy via, cobalt alloy, ironalloy via, doped via or the like. The via 426 extends from a via base427 to a via apex 428. The via base 427 is, in one example, proximate tothe base pad 424 and the base pad 424 is, in one example, proximate toor included with a conductive trace(e.g., the conductive trace 204 of apackage assembly as shown in FIG. 2). The cap assembly 430 (e.g., anexample of a cap) is proximate to the via apex 428. Accordingly, the via426 extends from the base pad 424 and provides an electricalinterconnection between the cap assembly 430 and the base pad 424.

In the example shown in FIG. 5, the via assembly 420 includes a capassembly 430 having the solder cap layer 432. Additionally, the capassembly 430 includes an electromigration resistant cap layer 434. In asimilar manner to the via assembly 400, the electromigration resistantcap layer 434 includes an electromigration resistant material (e.g., athird conductive material) including, but not limited to, one or more ofa nickel alloy, cobalt alloy, iron alloy or the like. In other examples,the nickel alloy includes one or more dopants such as tungsten,molybdenum, ruthenium or the like as previously described herein. Theincreased electromigration resistance of the electromigration resistancecap layer 434 decreases intermetallic growth between the materials ofthe solder cap layer 432 (e.g., tin) and the base pad 424 and the via426 (e.g., copper) and enhances Imax (maximum current) for the viaassembly 400. In other examples, the via 426 also includes anelectromigration resistant material, for instance, one or more of anickel, nickel alloy, cobalt alloy, iron alloy or one or more of thedoped alloys described herein.

In a manner similar to the via assembly 400, the cap assembly 430 has arelatively decreased dimension or profile relative to caps of viaassemblies, such as the via assemblies 300, 302 shown in FIG. 3A. Inexample shown in FIG. 5, the cap assembly 430 includes theelectromigration resistant cap layer 434 having a higherelectromigration resistance relative to nickel and at least some nickelalloys applied as the interface layer 312 in FIG. 3A. The increasedelectromigration resistance facilitates the application, for instance,plating of a layer 434 that is relatively thinner than the interfacelayer 312 (shown in FIG. 3A). For instance, the interface layer 312 isaround three microns, and in some examples the layer 434 isapproximately half that (e.g., around 15 microns) while havingapproximately the same electromigration resistance as the interfacelayer 312. Accordingly, the cap assembly 430, including theelectromigration resistant cap layer 434, is minimized similarly to thecap 410 shown in FIG. 4 (having the electromigration resistance via406). Accordingly, variation of the thickness (or height) of the capassemblies 430, including the via assemblies 420, are minimized relativeto designs having thicker cap assemblies 430. For instance, because thecap assemblies 430 have minimized profiles as described herein thevariation therebetween thickness (e.g., BTV) in a reflowed configurationis decreased relative to the thickness variation 316 shown in FIG. 3A.

FIG. 6 shows one example of first and second via assemblies 600, 602constructed similarly to the via assembly 400 shown in FIG. 4. Forinstance, the first and second via assemblies 600, 602 include base pads608, caps 612 and electromigration resistant vias 610 extendingtherebetween. Each of the first and second via assemblies 600, 602 havediffering profiles. For instance, the first via assembly 600 includes afirst assembly profile 604. While the second via assembly 602 includes asecond assembly profile 606. In the example shown in FIG. 6, in theapplication configuration shown on the left portion of the figure, eachof the first and second via assemblies 600, 602 are shown with theirrespective profiles 604, 606 corresponding to a dimensional parameter,such as diameter of the vias 610. In other examples, the first andsecond assembly profiles 604, 606 correspond to one or more otherfeatures of the first and second via assemblies 600, 602 including, butnot limited to, one or more of the dimeter of the vias 610 or caps 612,the perimeter of one or more of these features, shape, combination ofshape, perimeter, diameter or the like. As shown in FIG. 6, the firstand second assembly profiles 604, 606 are different from each other. Forinstance, the second assembly profile 606 is relatively larger andincludes diameters of the electromigration resistant via 610, but is notlimited to, diameters of the electromigration resistant via 610 of 70microns or less, 45 microns or less or the like. Conversely, the firstassembly profile 604 of the first via assembly 600 has a smaller profilerelative to the second assembly profile 606. For instance, where thefirst assembly profile 604 corresponds to a diameter of theelectromigration resistant via 610, the first assembly profile 604, invarious examples, includes diameters of the via including, but notlimited to, 23 microns or less, 10 microns or less, 6 microns or less orthe like.

As further shown in FIG. 6, the first and second via assemblies 600, 602are shown in two configurations. An application configuration is shownin the left portion of the Figure and a reflowed configuration is shownin the right portion. In the reflowed configuration, heat is (or waspreviously) applied to the first and second via assemblies 600, 602 tocause reflow. In some examples, reflowing of the first and second viaassemblies 600, 602 including, for instance, their caps 612 facilitatesthe bonding of the first and second via assemblies 600, 602 withcomponents such as the dies 206, 207 shown in FIG. 2. The reflowingprocess initiates dimensional changes in the first and second viaassemblies 600, 602, for instance, as the caps 612 are bonded withcorresponding contacts (e.g., the first or second contact arrays 208,209 shown in FIG. 2).

As previously described, the electromigration resistant vias 610 providean electromigration resistant material interposed between the respectivebase pads 608 and the caps 612. The positioning of the electromigrationresistant material within the vias 610 facilitates the minimizing of theheight of the caps 612 for each of the first and second via assemblies600, 602 (e.g., relative to the caps 310 shown in FIG. 3A). At the sametime, electromigration resistance is increased by providing anelectromigration resistant material in the vias 610 to isolate each ofthe base pad 608 and the cap 612 from each other.

Because the caps 612 have a decreased thickness or profile relative tothe caps previously described herein (See FIG. 3A) during relaxing eachof the caps 612 experiences decreased variation including changes inheight. For instance, as shown in FIG. 6, the thickness or heightvariation 616 between the caps 612 of each of the first and second viaassemblies 600, 602 in the reflowed configuration is minimized relativeto the thickness or height variation 316 of the via assemblies 300, 302shown in FIG. 3A. In one example, the thickness or height variation 616is around 5 to 15 percent less, 8 to 12 percent less or the likerelative to the thickness or height variation 316 shown in FIG. 3A,

Additionally, the caps 612 of the first and second via assemblies 600,602 provide a planar die interface profile 618 having a substantiallyplanar characteristic (including incidental variations according to thethickness or height variation 616) relative to the undulating dieinterface profile 318 shown in FIG. 3A. Because the electromigrationresistant material is provided within the vias 610 the caps 612 areminimized in height, and when reflowed the caps 612 have a minimizedthickness variation 616. The minimal thickness variation 616 between thecaps 612 accordingly provides a planar die interface profile 618 tofacilitate the robust and reliable coupling between the caps 612 of thevia assemblies 600, 602 and devices, such as the example dies 206, 207shown in FIG. 2. Accordingly, the first and second via assemblies 600,602 including via assemblies having differing first and second assemblyprofiles 604, 606 provide a minimized thickness or height variation 616relative to previous via assemblies while at the same time enhancingelectromigration resistance through positioning of the electromigrationresistant material such as nickel, nickel alloys, iron alloys or thelike within the vias 610.

FIG. 7 shows another example of via assemblies 700, 702. The first andsecond via assemblies 700, 702 correspond to the via assembly 500 shownin FIG. 5. For instance, the first and second via assemblies 700, 702include respective cap assemblies 712 coupled with vias 710. As furthershown in FIG. 7, each of the cap assemblies 712 of the first and secondvia assemblies 700, 702 includes a solder cap layer 432 (e.g., tin) andan intervening electromigration resistant cap layer 434 interposedbetween the solder cap layer 432 and the via 710. As previouslydescribed, the electromigration resistant cap layer 434 includes one ormore alloys configured to provide enhanced electromigration resistancerelative to other interface cap layer such as nickel. For instance, inone example, the electromigration resistant cap layers 434 of each ofthe via assemblies 700, 702 includes one or more of nickel alloys,cobalt alloys, iron alloys or the like. In other examples, the alloysare doped with one or more materials including, but not limited toruthenium, molybdenum or tungsten.

In a similar manner to the via assemblies 600, 602 shown in FIG. 6, thevia assemblies 700, 702 including the electromigration resistant caplayers 434 are applied in a relatively thin layer compared to otherinterface layers such as nickel (e.g., the interface layer 312 shown inFIG. 3A). Enhanced electromigration resistance of these layers 434facilitates the minimizing of the plating thickness of the layer 434material and accordingly allows for the minimization of the overallthickness of each of the cap assemblies 712. For instance, as shown inFIG. 7, each of the cap assemblies 712 has a common applicationthickness 714 corresponding, for instance, to the combined platingthicknesses of each of the solder cap layers 432 and theelectromigration resistant cap layers 434 of the cap assemblies 712. Thecommon application thickness 714 of the cap assembly 712 is relativelysmaller compared to conventional cap assemblies, for instance, the caps310 shown in FIG. 3A. Optionally, the cap assemblies 712 further includean underlying layer, such as a portion of the vias 710 as shown in FIG.7.

Because the cap assemblies 712 are minimized as described herein (e.g.,with the inclusion of an electromigration resistant cap layer asdescribed herein), the variation in the cap assemblies 712, forinstance, from the application configuration to the reflowedconfiguration shown in FIG. 7 is minimized. As previously described,each of the first and second via assemblies 700, 702 have a commonapplication thickness 714 for their respective cap assemblies 712. Asshown on the right portion of FIG. 7, the first and second viaassemblies 700, 702 include the cap assemblies 712 with a minimizedthickness or height variation 716. Accordingly, the profile of the firstand second via assemblies 700, 702 is a planar die interface profile 718that facilitates the robust and reliable coupling of the first andsecond via assemblies 700, 702 with devices, such as the example dies206, 207 shown in FIG. 2. Stated another way, because the cap assemblies712 include minimized heights, thicknesses or the like during theapplication configuration, the variation between the cap assemblies 712in the reflowed configuration shown on the right portion of FIG. 7 isminimized. For instance, the thickness or height variation 716 isminimized compared to the thickness or height variation 316 shown inFIG. 3. Accordingly, tilted or undulating profiles of the via assemblies700, 702 are minimized, and instead the planar die interface profile 718is provided to facilitate the reliable and robust coupling of deviceswith each of the first and second via assemblies 700, 702.

Additionally, with each of the via assemblies 600, 602 and 700, 702shown respectively in FIGS. 6 and 7, the electromigration resistantfeatures (vias, cap layers or the like) provide additional benefits forthe varying via assemblies provided at varied pitches (e.g., fine ordense in contrast to coarse or less dense). As previously described, insome examples, smaller profile via assemblies such as the first viaassemblies 600, 700 shown in FIGS. 6 and 7 are, in one example,clustered in a fine pitched configuration such as the fine center tocenter pitch of the first via assembly array 332 in FIG. 3B. Conversely,the larger profile via assemblies 602, 702, in other examples, arearranged similar to the less dense (coarse center to center pitch)second via assembly array 334 shown in FIG. 3B.

As previously described, the clustering of smaller via assembliesdecreases the spacing between the via assemblies to facilitate clusteredelectrical interconnections with corresponding fine pitch contact arraysof devices (e.g., the first contact array 208 shown in FIG. 2).Substrate variation 344 shown in FIG. 3B is, in some examples, caused bythe buildup layers of the substrate around and within the fine pitch viaassemblies. The substrate variation 344 causes an undulating dieinterface profile 342, as shown in FIG. 3B. In combination with thethickness variation 316 caused by dimensional changes during reflow andthe associated undulating die interface profile 318 (see FIG. 3A) theundulating (non-planar) interface profile of the via assemblies isfurther exaggerated.

In contrast to the substrate variation 344 and undulating die interfaceprofile 342 in FIG. 3B, with the via assemblies described herein (e.g.,the via assemblies 600, 700) the minimized profiles of each of the capsor cap assemblies 612, 712 attenuates the substrate variation 344.Stated another way, while some substrate variation may remain duringbuildup of the substrate in a manner similar to that shown in FIG. 3B,minimal variation is observed because of the profiles of the viaassemblies having the electromigration resistant conductive materials.Because the via assemblies 600, 602 and 700, 702 have minimal thicknessvariations 616, 716 after reflow the substrate variation (e.g., shown inFIG. 3B and caused by substrate build up) is not exaggerated, and anoverall planar die interface profile is provided.

FIG. 8 shows one example of a method 800 for interconnecting dies withone or more via assemblies, as described herein. In describing themethod 800, reference is made to one or more components, features,functions, steps or the like previously described herein. Whereconvenient, reference is made to the components, features, steps or thelike with reference numerals. The reference numerals provided areexemplary and are not exclusive. For instance, components, features,functions, steps or the like described in the method 800 include, butare not limited to, the corresponding numbered elements provided hereinand other corresponding elements described herein (both numbered andunnumbered) as well as their equivalents.

At 802, the method 800 includes forming via assemblies 210, 212 along asubstrate 202, as shown by way of example in FIG. 2. Forming the viaassemblies includes at 804 forming vias 406 (or 426) in the substrateover base pads 404 (or 424). At 806, caps 410 (or 430) are formed overthe vias 406 (or 426), and at least one of the vias or the caps includeselectromigration resistant material configured to isolate each of thebase pad and the cap from intermetallic compound growth therebetween. At808 the via assemblies include first via assemblies 600 (or 700) havingfirst assembly profiles 604 (or 704), and second via assemblies 602 702)having second assembly profiles 606 (or 706) as shown in FIG. 6 (or 7).In one example, the first assembly profiles are smaller than the secondassembly profiles. At 810, the caps 612 (or 712) of the first and secondvia assemblies have a common thickness in an application configuration(e.g., as shown in the left views of FIGS. 6 and 7).

At 812, the method 800 includes bonding one or more die, such as thefirst die 206 and or second die 208 of FIG. 2 with the caps of the firstand second via assemblies. Bonding includes, at 814, heating the firstand second via assemblies. The caps 612 (or 712) of the first and secondvia assemblies are reflowed, for instance according to the heating. At816, reflowing the caps 612 (or 712) provides a reflowed configurationof the caps having a thickness variation of 10 microns or less acrossthe first and second via assemblies 600 (700), 602 (702) having therespective first and second assembly profiles.

Several options for the method 800 follow. In one example, reflowing thecaps provides the reflowed configuration of the caps having a thicknessvariation 616 (or 716) of 3 microns or less across the first and secondvia assemblies having respective first and second assembly profiles. Aspreviously described herein, the minimized thickness variations(relative to previous via assemblies and packages) enhances theinterface profiles of the via assemblies (see the planar die interfaceprofiles 618, 718 shown in FIGS. 6 and 7).

In another example, forming vias in the substrate each includes fillinga via passage 408 with the electromigration resistant material between avia base 416 proximate the base pad 404 and a via apex 418 proximate thecap assembly 410 (e.g., a cap). Optionally, forming caps over the viasincludes applying the electromigration resistant material as a cap layer434 (e.g., an electromigration resistant cap layer) between a via apex428 of the via 426 and a solder cap layer 432 of the cap 430 (e.g., acap assembly). In still another example, forming via assemblies includesforming the vias and the caps of the first via assemblies with the firstassembly profile 604 (or 704) at a first center to center pitch (e.g.,measured from the centers of the vias of the first via assemblies), andforming the vias and the caps of the second via assemblies with thesecond assembly profile 606 (or 706) at a second center to center pitchgreater (e.g., measured from the centers of the vias of the second viaassemblies).

In one example, forming the vias and caps of the first via assemblieswith the first assembly profile 604 (or 704) includes each of the capsand vias having a first diameter of around 10 microns or less, andforming the vias and caps of the second via assemblies with the secondassembly profile 606 (or 706) includes each of the caps and vias havinga second diameter of around 45 microns or less. In another example,forming caps over the vias of each of the first and second viaassemblies is performed at the same time and with the common thicknessas shown, for instance, in the left views of FIGS. 6 and 7.

Various Notes & Examples

Example 1 can include subject matter, such as a package assemblycomprising: a substrate extending from a first substrate end to a secondsubstrate end, the substrate includes a plurality of conductive traces;one or more die coupled along the substrate, at least a first die of theone or more die includes a first array of contacts; and a plurality ofvia assemblies interposed between at least the first array of contactsand the plurality of conductive traces, and each via assembly betweenthe first array and the plurality of conductive traces includes: a basepad in communication with a conductive trace of the plurality ofconductive traces, the base pad includes at least a first conductivematerial, a cap in communication with a contact of the first array ofcontacts, the cap includes at least a second conductive materialdifferent from the first conductive material, and an electromigrationresistant via within a via passage between the base pad and the cap, theelectromigration resistant via is configured to isolate each of the basepad and the cap from intermetallic compound growth and includes a thirdconductive material different from the first and second conductivematerials.

Example 2 can include, or can optionally be combined with the subjectmatter of Example 1, to optionally include wherein the electromigrationresistant via includes a nickel filler, a nickel alloy filler, a cobaltalloy filler or an iron alloy filler.

Example 3 can include, or can optionally be combined with the subjectmatter of one or any combination of Examples 1 or 2 to optionallyinclude wherein the nickel alloy filler includes nickel and one or moreof tungsten, molybdenum or ruthenium.

Example 4 can include, or can optionally be combined with the subjectmatter of one or any combination of Examples 1-3 to optionally includewherein the cap includes a solder cap layer and an electromigrationresistant cap layer interposed between the solder cap layer and theelectromigration resistant via.

Example 5 can include, or can optionally be combined with the subjectmatter of one or any combination of Examples 1-4 to optionally includewherein the base pad includes a first volume of the first conductivematerial, and the electromigration resistant via includes a third volumeof the third conductive material greater than the first volume.

Example 6 can include, or can optionally be combined with the subjectmatter of Examples 1-5 to optionally include wherein the cap includes asecond volume of the second conductive material, and theelectromigration resistant via includes a third volume of the thirdconductive material greater than the second volume.

Example 7 can include, or can optionally be combined with the subjectmatter of Examples 1-6 to optionally include wherein theelectromigration resistant via extends between a via base proximate thebase pad and a via apex proximate the cap.

Example 8 can include, or can optionally be combined with the subjectmatter of Examples 1-7 to optionally include wherein the firstconductive material of the base pad is remote relative to the secondconductive material of the cap according to the electromigrationresistant via between the base pad and the cap.

Example 9 can include, or can optionally be combined with the subjectmatter of Examples 1-8 to optionally include wherein the first dieincludes: the first array of contacts having a fine contact pitch, and asecond array of contacts having a coarse contact pitch greater than thefine contact pitch; and wherein the plurality of conductive tracesincludes: a first array of conductive traces having a fine trace pitch,and a second array of conductive traces having a coarse trace pitchgreater than the fine contact pitch.

Example 10 can include, or can optionally be combined with the subjectmatter of Examples 1-9 to optionally include wherein the plurality ofvia assemblies are interposed between the first and second arrays ofcontacts and the first and second arrays of conductive traces,respectively, and each via assembly between the second array of contactsand the second array of conductive traces includes: a second base pad incommunication with a second conductive trace of the plurality ofconductive traces, the second base pad includes at least the firstconductive material, a second cap in communication with a second contactof the second array of contacts, the second cap includes at least thesecond conductive material, and a second electromigration resistant viawithin a second via passage between the second base pad and the secondcap, the electromigration resistant via is configured to isolate each ofthe second base pad and the second cap from intermetallic compoundgrowth and includes the third conductive material.

Example 11 can include, or can optionally be combined with the subjectmatter of Examples 1-10 to optionally include a package assemblycomprising: a substrate extending from a first substrate end to a secondsubstrate end; one or more die coupled along the substrate, at least afirst die of the one or more die includes a first contact array and asecond contact array; first via assemblies coupled with the firstcontact array and second via assemblies coupled with the second contactarray, and each of the first and second via assemblies includes: a basepad including at least a first conductive material, a cap assemblyincluding at least a second conductive material, a via interposedbetween the cap assembly and the base pad, and one or more of the capassembly or the via includes an electromigration resistant materialconfigured to isolate each of the base pad and the cap assembly fromintermetallic compound growth; and wherein each first cap assembly andvia of the first via assemblies has a first assembly profile less than asecond assembly profile of each second cap assembly and via of thesecond via assemblies, and the first and second cap assemblies includeapplication and reflowed configurations: in the applicationconfiguration the first and second cap assemblies have a common appliedthickness, and in the reflowed configuration the first and second capassemblies have a thickness variation of ten microns or less.

Example 12 can include, or can optionally be combined with the subjectmatter of Examples 1-11 to optionally include wherein the thicknessvariation is 5 microns or less.

Example 13 can include, or can optionally be combined with the subjectmatter of Examples 1-12 to optionally include wherein the thicknessvariation is 3 micron or less.

Example 14 can include, or can optionally be combined with the subjecttwitter of Examples 1-13 to optionally include wherein the firstassembly profile of the first cap assembly and via is a first diameterof around 23 microns or less and the second assembly profile of thesecond cap assembly and via is a second diameter of around 70 microns orless.

Example 15 can include, or can optionally be combined with the subjectmatter of Examples 1-14 to optionally include wherein the first assemblyprofile of the first cap assembly and via is a first diameter of around10 microns or less and the second assembly profile of the second capassembly and via is a second diameter of around 45 microns or less.

Example 16 can include, or can optionally be combined with the subjectmatter of Examples 1-15 to optionally include wherein the first assemblyprofile of the first cap assembly and via is a first diameter of around6 microns or less and the second assembly profile of the second capassembly and via is a second diameter of around 45 microns or less.

Example 17 can include, or can optionally be combined with the subjectmatter of Examples 1-16 to optionally include wherein the vias of thefirst and second via assemblies include the electromigration resistantmaterial extending between a via base proximate the base pad and a viaapex proximate the cap assembly.

Example 18 can include, or can optionally be combined with the subjectmatter of Examples 1-17 to optionally include wherein the first andsecond cap assemblies include an electromigration resistance cap layerof the electromigration resistant material between a solder cap layerand a via apex of the vias.

Example 19 can include, or can optionally be combined with the subjectmatter of Examples 1-18 to optionally include wherein the substrateincludes one or more of an embedded multi-die interconnect bridgeassembly or a patch on interface assembly.

Example 20 can include, or can optionally be combined with the subjectmatter of Examples 1-19 to optionally include a method firinterconnecting dies comprising: forming via assemblies along asubstrate, forming the via assemblies includes: forming vias in thesubstrate over base pads, forming caps over the vias, and at least oneof the vias or the caps includes electromigration resistant materialconfigured to isolate each of the base pad and the cap fromintermetallic compound growth therebetween, wherein the via assembliesinclude first via assemblies having a first assembly profile, and secondvia assemblies having second assembly profiles, the first assemblyprofile smaller than the second assembly profile, and wherein the capsof the first and second via assemblies have a common thickness in anapplication configuration; and bonding one or more die with the caps ofthe first and second via assemblies, bonding includes: heating the firstand second via assemblies, reflowing the caps of each of the first andsecond via assemblies, and wherein reflowing the caps provides areflowed configuration of the caps having a thickness variation of 10microns or less across the first and second via assemblies havingrespective first and second assembly profiles.

Example 21 can include, or can optionally be combined with the subjectmatter of Examples 1-20 to optionally include wherein reflowing the capsprovides the reflowed configuration of the caps having a thicknessvariation 3 microns or less across the first and second via assemblieshaving respective first and second assembly profiles.

Example 22 can include, or can optionally be combined with the subjectmatter of Examples 1-21 to optionally include wherein forming vias inthe substrate each includes filling a via passage with theelectromigration resistant material between a via base proximate thebase pad and a via apex proximate the cap assembly.

Example 23 can include, or can optionally be combined with the subjectmatter of Examples 1-22 to optionally include wherein forming caps overthe vias each includes applying the electromigration resistant materialas a cap layer between a via apex of the via and a solder cap layer ofthe cap.

Example 24 can include, or can optionally he combined with the subjectmatter of Examples 1-23 to optionally include wherein forming viaassemblies includes: forming the vias and the caps of the first viaassemblies with the first assembly profile at a first center to centerpitch, and forming the vias and the caps of the second via assemblieswith the second assembly profile at a second center to center pitchgreater than the first center to center pitch.

Example 25 can include, or can optionally be combined with the subjectmatter of Examples 1-24 to optionally include wherein forming the viasand caps of the first via assemblies with the first assembly profileincludes each of the caps and vias having a first diameter of around 10microns or less, and forming the vias and caps of the second viaassemblies with the second assembly profile includes each of the capsand vias having a second diameter of around 45 microns or less.

Example 26 can include, or can optionally be combined with the subjectmatter of Examples 1-25 to optionally include wherein forming caps overthe vias of each of the first and second via assemblies is performed atthe same time and with the common thickness.

Each of these non-limiting examples can stand on its own, or can becombined in various permutations or combinations with one or more of theother examples.

The above detailed description includes references to the accompanyingdrawings, which form a part of the detailed description. The drawingsshow, by way of illustration, specific embodiments in which thedisclosure can be practiced. These embodiments are also referred toherein as “examples.” Such examples can include elements in addition tothose shown or described. However, the present inventors alsocontemplate examples in which only those elements shown or described areprovided. Moreover, the present inventors also contemplate examplesusing any combination or permutation of those elements shown ordescribed (or one or more aspects thereof), either with respect to aparticular example (or one or more aspects thereof), or with respect toother examples (or one or more aspects thereof) shown or describedherein.

In the event of inconsistent usages between this document and anydocuments so incorporated by reference, the usage in this documentcontrols.

In this document, the terms “a” or “an” are used, as is common in patentdocuments, to include one or more than one, independent of any otherinstances or usages of “at least one” or “one or more.” In thisdocument, the term “or” is used to refer to a nonexclusive or, such that“A or B” includes “A but not B,” “B but not A,” and “A and B,” unlessotherwise indicated. In this document, the terms “including” and “inwhich” are used as the plain-English equivalents of the respective terms“comprising” and “wherein.” Also, in the following claims, the terms“including” and “comprising” are open-ended, that is, a system, device,article, composition, formulation, or process that includes elements inaddition to those listed after such a term in a claim are still deemedto fall within the scope of that claim. Moreover, in the followingclaims, the terms “first,” “second,” and “third,” etc. are used merelyas labels, and are not intended to impose numerical requirements ontheir objects.

The above description is intended to be illustrative, and notrestrictive. For example, the above-described examples (or one or moreaspects thereof) ay be used in combination with each other. Otherembodiments can be used, such as by one of ordinary skill in the artupon reviewing the above description. The Abstract is provided to complywith 37 C.F.R. § 1.72(b), to allow the reader to quickly ascertain thenature of the technical disclosure. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. Also, in the above Detailed Description,various features may be grouped together to streamline the disclosure.This should not be interpreted as intending that an unclaimed disclosedfeature is essential to any claim. Rather, inventive subject matter maylie in less than all features of a particular disclosed embodiment.Thus, the following claims are hereby incorporated into the DetailedDescription as examples or embodiments, with each claim standing on itsown as a separate embodiment, and it is contemplated that suchembodiments can be combined with each other in various combinations orpermutations. The scope of the disclosure should be determined withreference to the appended claims, along with the full scope ofequivalents to which such claims are entitled.

What is claimed is:
 1. A composite device assembly comprising: aplurality of dies, each die of the plurality of dies includes arespective array of contacts; a substrate extending from a firstsubstrate end to a second substrate end, the plurality of dies arecoupled along the substrate, the substrate includes: one or moreembedded multi-die interconnect bridges (EMIB) having associatedconductive traces, the one or more EMIB configured to interconnect theplurality of dies; and a plurality of via assemblies; and each viaassembly of the plurality of via assemblies is interposed between thearray of contacts of a die of the plurality of dies and the conductivetraces of an EMIB of the one or more EMIB, each via assembly includes: abase pad in communication with a conductive trace of the EMIB, the basepad includes at least a first conductive material; a cap incommunication with a contact of the first array of contacts, the capincludes at least a second conductive material different from the firstconductive material; and an electromigration resistant via having athird conductive material different from the first and second conductivematerials, the electromigration resistant via is configured to isolateeach of the base pad and the cap from intermetallic compound growth. 2.The composite device assembly of claim 1, wherein the electromigrationresistant via includes nickel.
 3. The composite device assembly of claim2, wherein the electromigration resistant via including nickel includesa nickel alloy having one or more of tungsten molybdenum or ruthenium.4. The composite device assembly of claim 1, wherein theelectromigration resistant via includes cobalt.
 5. The composite deviceassembly of claim 1, wherein the electromigration resistant via includesiron.
 6. The composite device assembly of claim 1, wherein theelectromigration resistant via includes one or more of a cobalt alloy oran iron alloy.
 7. The composite device assembly of claim 1, wherein thecap includes a solder cap layer and an electromigration resistant caplayer interposed between the solder cap layer and the electromigrationresistant via.
 8. The composite device assembly of claim 1, wherein thecap and base pad include first and second volumes of the respectivefirst and second conductive materials, and the electromigrationresistant via includes a third volume of the third conductive materialgreater than the first or second volumes.
 9. The composite deviceassembly of claim 1, wherein the plurality of dies includes a first diehaving a fine pitch array of contacts and a second die having a coarsepitch array of contacts with a greater contact pitch than the fine pitcharray of contacts; and wherein the one or more EMIB includes a firstEMIB having a fine pitch array of conductive traces and a second EMIBhaving a coarse pitch array of conductive traces having a greater tracepitch than the fine pitch array of conductive traces.
 10. The compositedevice assembly of claim 9, wherein the plurality of via assemblies areinterposed between the fine pitch and coarse pitch arrays of contactsand the fine pitch and coarse pitch arrays of conductive traces of thefirst and second EMIB, respectively; a first via assembly array of theplurality of via assemblies between the fine pitch array of contacts andthe fine pitch array of conductive traces has a fine via pitch; and asecond via assembly array of the plurality of via assemblies between thecoarse pitch array of contacts and the coarse pitch array of conductivetraces has a coarse via pitch.
 11. The composite device assembly ofclaim 10, wherein small profile caps of the first via assembly array andlarge profile caps of the second via assembly array have a thicknessvariation of ten microns or less.
 12. The composite device assembly ofclaim 11, wherein the thickness variation is 5 microns or less.
 13. Acomposite device assembly comprising: a plurality of dies, each die ofthe plurality of dies includes a respective array of contacts; asubstrate extending from a first substrate end to a second substrateend; the substrate includes one or more embedded multi-die interconnectbridges (EMIB) having associated conductive traces; first and second viaassemblies coupled between the respective arrays of contacts and theconductive traces of the one or more EMIB, and each of the first andsecond via assemblies includes: a base pad including at least a firstconductive material; a cap assembly including at least a secondconductive material; a via interposed between the cap assembly and thebase pad, and one or more of the cap assembly or the via includes anelectromigration resistant material configured to isolate each of thebase pad and the cap assembly from intermetallic compound growth; andwherein each cap assembly and via of the first via assembly has a firstassembly profile less than a second assembly profile of the cap assemblyand via of the second via assembly, and the first and second capassemblies include application and reflowed configurations: in theapplication configuration the first and second cap assemblies have acommon applied thickness; and in the reflowed configuration the firstand second cap assemblies have a thickness variation of ten microns orless.
 14. The composite device assembly of claim 13, wherein thethickness variation is 5 microns or less.
 15. The composite deviceassembly of claim 13, wherein the thickness variation is 3 micron orless.
 16. The composite device assembly of claim 13, wherein the firstassembly profile of the first cap assembly and via is a first diameterof around 23 microns or less and the second assembly profile of thesecond cap assembly and via is a second diameter of around 70 microns orless.
 17. The composite device assembly of claim 13, wherein the firstassembly profile of the first cap assembly and via is a first diameterof around 6 microns or less and the second assembly profile of thesecond cap assembly and via is a second diameter of around 45 microns orless.
 18. The composite device assembly of claim 13, wherein the vias ofthe first and second via assemblies include the electromigrationresistant material.
 19. The composite device assembly of claim 13,wherein the first and second cap assemblies include an electromigrationresistant cap layer of the electromigration resistant material between asolder cap layer and a via apex of the via.
 20. The composite deviceassembly of claim 13, wherein the via includes nickel.
 21. The compositedevice assembly of claim 21, wherein the via including nickel includes anickel alloy having one or more of tungsten, molybdenum or ruthenium.22. The composite device assembly of claim 13, wherein the via includescobalt.
 23. The composite device assembly of claim 13, wherein the viaincludes iron.
 24. The composite device assembly of claim 13, whereinthe via includes one or more of a cobalt alloy or an iron alloy.